C1825C225J5RAC [FREESCALE]
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET; 射頻功率場效應晶體管N - 溝道增強 - 模式橫向MOSFET
| 元器件型號： | C1825C225J5RAC |
| 生產廠家： | 
FREESCALE SEMICONDUCTOR, INC
|
| 描述和應用： | RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| PDF文件： | 總19頁 (文件大?。?443K) |
| 下載文檔： | 下載PDF數據表文檔文件 |
| 型號參數：C1825C225J5RAC參數 | |
| 是否Rohs認證 | 不符合 |
| 生命周期 | Active |
| IHS 制造商 | KEMET ELECTRONICS CORP |
| Reach Compliance Code | not_compliant |
| ECCN代碼 | EAR99 |
| HTS代碼 | 8532.24.00.20 |
| 風險等級 | 5.42 |
| 電容 | 2.2 µF |
| 電容器類型 | CERAMIC CAPACITOR |
| 介電材料 | CERAMIC |
| 高度 | 1.5 mm |
| JESD-609代碼 | e0 |
| 長度 | 6.4 mm |
| 安裝特點 | SURFACE MOUNT |
| 多層 | Yes |
| 負容差 | 5% |
| 端子數量 | 2 |
| 最高工作溫度 | 125 °C |
| 最低工作溫度 | -55 °C |
| 封裝形式 | SMT |
| 包裝方法 | TR, Embossed Plastic, 7 Inch |
| 正容差 | 5% |
| 額定（直流）電壓（URdc） | 50 V |
| 尺寸代碼 | 1825 |
| 表面貼裝 | YES |
| 溫度特性代碼 | X7R |
| 溫度系數 | 15% ppm/ °C |
| 端子面層 | Tin/Lead (Sn90Pb10) - with Nickel (Ni) barrier |
| 端子形狀 | WRAPAROUND |
| 寬度 | 4.5 mm |
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